SEMICONDUCTOR PG05UBUL2 TECHNICAL DATA Single Line TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. FEATURES C 2 Transient protection for data lines to IEC 61000-4-2(ESD) : 2 20kV(air/contact) A IEC 61000-4-4(EFT) : 2.5kV/50A 1 IEC 61000-4-5(Surge) 3A(tp=8/20 s) Small package for use in portable electronics. DIM MILLIMETERS _ 0.05 A 1.0 + _ 0.05 B 0.6 + 0.39 +0.01 C - 0.03 _ 0.05 D 0.5 + _ 0.25 +0.05 E _ 0.05 G 0.65 + B 1 Suitable replacement for Multi-Layer Varistors in ESD protection applications. (* Multi-Layer Varistors [0402 Size]) E Protects on I/O or power line. G Low clamping voltage. E Low leakage current. H D 1. Anode 2. Cathode APPLICATIONS USB 2.0, 10/100/1000 Ethernet, FireWire, DVI, HDMI, S-ATA ULP-2(1) Mobile Communication Consumer Products (STB, MP3, DVD, DSC...) LCD-Display, Camera Notebooks and desktop computers, peripherals Marking MAXIMUM RATING (Ta=25 CHARACTERISTIC T CATHODE MARK 2 ) SYMBOL RATING UNIT Peak Pulse Power (tp=8/20 s) PPK 63 W Peak Pulse Current (tp=8/20 s) IPP 3 A Operating Temperature Range TOP -55 125 Storage Temperature Tstg -55 150 2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - 5.3 - 5.3 V It=1mA 7 - - V VRWM=5.3V - - 100 IPP=1A, tp=8/20 s - 11 - IPP=3A, tp=8/20 s - 14 21 VR=0V, f=1MHz - 0.27 0.4 Reverse Leakage Current IR Clamping Voltage VC CJ Junction Capacitance 2010. 6. 7 Revision No : 2 1 ) VBR Reverse Breakdown Voltage 1 A V pF 1/3 PG05UBUL2 CLAMPING VOLTAGE REVERSE CURRENT REVERSE CURRENT IR (A) CLAMPING VOLTAGE VC (V) 17 16 15 14 13 12 11 10 9 8 tP=8/20ט 7 0 1 2 3 10 -7 10 -8 10 -9 10 -10 10 -11 10 -12 +125Ƅ +85Ƅ 0 4 +25Ƅ 1 3 4 5 6.5 AMBIENT TEMPERATURE Ta (Ƅ) PEAK PULSE CURRENT IPP (Α) LINE CAPACITANCE CAPACITANCE 0.25 CAPACITANCE Cj (pF) 0.4 CAPACITANCE Cj (pF) 2 0.35 0.3 0.25 0.2 0.15 0.1 0.05 f=1 MHZ 0 0 1 2 3 4 5 6 0.24 0.23 VR=0V 0.22 VR=3.3V VR=5.3V 0.21 0.2 0.19 0 500 1000 1500 2000 2500 3000 FREQUENCY f (LGy) REVERSE VOLTAGE VR (V) CAPACITANCE Cj (pF) LINE CAPACITANCE 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 -50 VR=5.3V VR=3.3V VR=0V f=1MHz -25 0 25 50 75 100 125 AMBIENT TEMPERATURE Ta (Ƅ) 2010. 6. 7 Revision No : 2 2/3 PG05UBUL2 C 2 2 A 1 DIM MILLIMETERS _ 0.05 A 1.0 + _ 0.05 B 0.6 + 0.39 +0.01 C - 0.03 _ + D 0.5 0.05 _ 0.05 0.25 + E _ 0.05 G 0.65 + B 1 E G E H D 1. Anode 2. Cathode ULP-2(1) 2010. 6. 7 Revision No : 2 3/3