SEMICONDUCTOR PG03DBVSC TECHNICAL DATA TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. CATHODE MARK FEATURES 50 Watts peak pulse power (tp=8/20 s) C D 1 2 Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) B IEC 61000-4-5(Lightning) 5A(tp=8/20 s) A DIM A B C D E F Bidirectional Type Pin Configuration Structure. Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. MILLIMETERS 1.4Ź0.05 1.0Ź0.05 0.6Ź0.05 0.28Ź0.03 0.5Ź0.05 0.12Ź0.03 Protects one I/O or power line. E F Low clamping voltage. Low leakage current. 1. ANODE 2. ANODE APPLICATIONS Cell phone handsets and accessories. VSC Microprocessor based equipment. Personal digital assistants (PDA’s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. Marking MAXIMUM RATING (Ta=25 CHARACTERISTIC 2 ) SYMBOL RATING Junction Temperature Tj -55 150 Storage Temperature Tstg -55 150 3B UNIT 2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage 1 1 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 3.3 V 4.2 - 6.2 V Zener Voltage VZ It=1mA Reverse Leakage Current IR VRWM=3.3V - - 20 A Junction Capacitance CJ VR=0V, f=1MHz - - 25 pF 2005. 6. 1 Revision No : 0 1/1