Diodes SMD Type Schottky Barrier Triple Diode BAT754L SOT-363 Unit: mm 0.525 +0.1 1.3-0.1 0.65 +0.15 2.3-0.15 +0.1 1.25-0.1 Features Very low forward voltage 0.36 Guard ring protected +0.05 0.1-0.02 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Low diode capacitance +0.05 0.95-0.05 Three independent diodes in a small plastic SMD package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Min Max Unit Per diode continuous reverse voltage VR 30 V continuous forward current IF 200 mA 300 mA 600 mA repetitive peak forward current IFRM non-repetitive peak forward current IFSM storage temperature Tstg junction temperature Tj operating ambient temperature Tamb thermal resistance from junction to ambient Rth j-a tp 1 s; ä 0.5 tp < 10 ms -65 +150 125 -65 +125 416 K/W E le c tric a l C h a ra c te ris tic s T a = 2 5 P a ra m e te r S ym bol fo rw a rd v o lta g e VF C o n d itio n s M ax I F = 0 .1 m A 200 IF = 1 m A 260 IF = 1 0 m A 340 IF = 3 0 m A 420 IF = 1 0 0 m A 750 re v e rs e c u rre n t IR V R = 2 5 V ; n o te 1 2 d io d e c a p a c ita n c e Cd f = 1 M H z; V R = 1 V 10 U n it mV A pF N o te 1 . P u ls e te s t: tp = 3 0 0 s ; ä = 0 .0 2 . Marking Marking L1 www.kexin.com.cn 1