Diodes SMD Type Schottky barrier diode 1PS79SB30 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Very Low forward voltage + +0.1 0.6-0.1 - Very Low reverse current Guard ring protected +0.1 1.6-0.1 0.77max +0.05 0.1-0.02 0.07max Ultra small plastic SMD package. Absolute Maximum Ratings Ta = 25 Max Unit continuous reverse voltage Parameter Symbol VR 40 V continuous forward current IF 200 mA 300 mA 1 A repetitive peak forward current IFSM non-repetitive peak forwrad current Conditions tp 1 s;ä Min 0.5 t = 8.3 ms half sinewave; IFSM JEDEC method storage temperature Tstg junction temperature Tj operating ambient temperature -65 +150 150 Tamb -65 +150 Electrical Characteristics Ta = 25 Parameter Symbol forward voltage VF Conditions Typ Max IF = 0.1 mA 190 220 IF = 1 mA 250 290 IF = 10 mA 320 360 IF = 100 mA 440 500 IF = 200 mA 520 600 Unit mV capacitance reverse current IR VR = 25 V, note 1; 0.5 A diods capacitance Cd VR = 1 V, f = 1 MHz; 20 pF 450 K/W thermal resistance from junction to ambient Rth j-a Note 1. Pulse test: pulse width = 300 s, ä = 0.02. Marking Marking G1 www.kexin.com.cn 1