Diodes SMD Type Schottky Barrier Diodes 1PS88SB48 SOT-363 Unit: mm 0.525 +0.1 1.3-0.1 0.65 +0.15 2.3-0.15 Ultra fast switching speed +0.1 1.25-0.1 Features 0.36 Low forward voltage Small SMD package +0.05 0.1-0.02 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Guard ring protected +0.05 0.95-0.05 Absorbs very high surge pulse Low capacitance. Absolute Maximum Ratings Ta = 25 Parameter Symbol continuous reverse voltage Conditions Min VR continuous forward current IF repetitive peak forward current IFRM non-repetitive peak forward current IFSM storage temperature Tstg junction temperature Tj tp 1 s; ä 0.5 tp < 10 ms -65 Max Unit 40 V 120 mA 120 mA 200 mA +150 150 operating ambient temperature Tamb thermal resistance from junction to ambient Rth j-a -65 +150 416 K/W E lectrical C haracteristics T a = 25 P aram eter continuous forw ard voltage continuous reverse current diode capacitance S ym bol C onditions M ax U nit IF = 1 m A 380 mV VF I F = 10 m A 500 mV I F = 40 m A 1 V V R = 30 V 1 V R = 80 V 10 V R =0 V ,f=1 M H z 5 IR CT A pF N ote 1. P ulse test: tp = 300 s; ä = 0.02. Marking Marking 8t5 www.kexin.com.cn 1