Diodes SMD Type SILICON SWITCHING DIODE 1SS123 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 High speed switching: trr = 9.0 ns MAX. 0.55 Low capacitance: Ct = 4.0 pF MAX 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Wide applications including switching,limitter,clipper. +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Double diode configuration assures economical use. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit V RM 70 V Peak Reverse Voltage DC Reverse Voltage VR 70 V Peak Reverse Voltage IFM 200 mA Average Rectified Current IO 100 mA DC Forward Current IF 100 mA Junction Temperature Tj 150 T stg -55 to+ 150 Storage Temperature Range Junction to Ambient* R 1.0 /mW Junction to Ambient R 0.67 /mW Electrical Characteristics Ta = 25 Parameter Symbol Continuous reverse voltage VF Reverse current IR Capacitance Ct Reverse recovery time trr Forward recovery voltage Vf r Test Conditions Min Typ Max IF = 1.0 mA 600 715 IF = 10 mA 750 855 IF = 50 mA 855 1100 IF = 100 mA 900 1300 VR = 70 V VR = 0, f = 1.0 MHz IF = 100 mA,VR = 1 V,RL = 100 IF = 100 mA 2.5 Unit mV 1.0 A 4.0 pF 9.0 ns 1.75 V Marking Marking A7 www.kexin.com.cn 1