KEXIN 1SS222

Diodes
SMD Type
SILICON SWITCHING DIODE
1SS222
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
High speed switching: trr = 3.0 ns MAX.
0.55
Low capacitance:Ct = 4.0 pF MAX.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Wide applications including switching, limitter clipper.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
V RM
70
V
DC Reverse Voltage
VR
70
V
Peak Forward Current
IFM
300
mA
Average Rectified Current
IO
100
mA
DC Forward Current
P
100
mW
Junction Temperature
Tj
150
T stg
-55 to + 150
Peak Reverse Voltage
Storage Temperature Range
Junction to Ambient
R
0.67
/mW
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Min
Typ
Max
IF = 10 mA
720
850
IF = 50 mA
850
1000
IF = 100 mA
950
1200
Continuous reverse voltage
VF
Reverse current
IR
VR = 70 V
capacitance
Ct
VR = 0, f = 1.0 MHz
Reverse recovery time
trr
IF = 10 mA,VR = 6 V, RL = 100
2.0
Unit
mV
1.0
A
4.0
pF
3.0
ns
Marking
Marking
A7
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