Diodes SMD Type SILICON SWITCHING DIODE 1SS222 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High speed switching: trr = 3.0 ns MAX. 0.55 Low capacitance:Ct = 4.0 pF MAX. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Wide applications including switching, limitter clipper. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit V RM 70 V DC Reverse Voltage VR 70 V Peak Forward Current IFM 300 mA Average Rectified Current IO 100 mA DC Forward Current P 100 mW Junction Temperature Tj 150 T stg -55 to + 150 Peak Reverse Voltage Storage Temperature Range Junction to Ambient R 0.67 /mW Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max IF = 10 mA 720 850 IF = 50 mA 850 1000 IF = 100 mA 950 1200 Continuous reverse voltage VF Reverse current IR VR = 70 V capacitance Ct VR = 0, f = 1.0 MHz Reverse recovery time trr IF = 10 mA,VR = 6 V, RL = 100 2.0 Unit mV 1.0 A 4.0 pF 3.0 ns Marking Marking A7 www.kexin.com.cn 1