Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS303 Features Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use. A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r P e a k R e v e rs e V o lta g e S ym bol R a tin g U n it V RM 75 V VR 50 V S u rg e C u rre n t (1 s ) N o te 1 IF S M 6 .0 A S u rg e C u rre n t (1 s) D C R e v e rs e V o lta g e IF S M 4 .0 A P e a k F o rw a rd C u rre n t N o te 1 IF M 450 mA P e a k F o rw a rd C u rre n t IF M 300 mA A v e ra g e R e c tifie d C u rre n t (N o te 1 ) IO 150 mA A v e ra g e R e c tifie d C u rre n t IO 100 mA J u n c tio n T e m p e ra tu re S to ra g e T e m p e ra tu re R a n g e Tj 150 T s tg -5 5 to + 1 5 0 J u n c tio n to A m b ie n t (N o te 1 ) R th ( j-a ) 1 .0 /m W J u n c tio n to A m b ie n t R th ( j-a ) 0 .8 5 /m W N o te 1 .B o th d io d e s lo a d e d s im u lta n e o u s ly . Electrical Characteristics Ta = 25 Parameter Forward voltage Symbol Test Conditions V F(1) Typ Max IF = 1 mA 0.72 1.0 V F(2) IF = 50 mA 0.88 1.1 V F(3) IF = 100 mA 1.0 1.2 0.1 A 2.5 4.0 pF 4.0 ns IR(1) V R = 50 V Capacitance Ct V R = 0, f = 1.0 MHz Reverse recovery time trr Reverse current Min Unit V Marking Marking A4 www.kexin.com.cn 1