KEXIN 1SV276

Diodes
SMD Type
Silicon Epitaxial Planar Diode
1SV276
SOD-323
+0.05
0.85-0.05
+0.1
1.3-0.1
+0.05
0.3-0.05
+0.1
1.7-0.1
Unit: mm
Features
High Capacitance Ratio:C1V/C4V = 2.0Typ.)
Low Series Resistance:rs = 0.22
+0.1
2.6-0.1
1.0max
(Typ.)
0.375
+0.05
0.1-0.02
0.475
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VR
10
V
Tj
125
T stg
-55 to +125
Electrical C haracteristics T a = 25
P aram eter
S ym bol
Reverse V oltage
VR
Reverse Current
Capacitance
Conditions
M in
IR = 1
10
A
Typ
M ax
V
IR
V R = 10 V
C 1V
f = 1 M Hz;V R = 1 V
15
16
17
C 4V
f = 1 M Hz;V R = 4 V
7
8
8.5
Capacitance Ratio
C 1V /C 4V
S eries Resistance
rs
3
1.8
V R = 1V , f = 470 M Hz
Unit
nA
pF
2.0
0.22
0.4
Marking
Marking
TL
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