Diodes SMD Type Silicon Epitaxial Planar Diode 1SV276 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.0Typ.) Low Series Resistance:rs = 0.22 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Junction Temperature Storage Temperature Range Symbol Value Unit VR 10 V Tj 125 T stg -55 to +125 Electrical C haracteristics T a = 25 P aram eter S ym bol Reverse V oltage VR Reverse Current Capacitance Conditions M in IR = 1 10 A Typ M ax V IR V R = 10 V C 1V f = 1 M Hz;V R = 1 V 15 16 17 C 4V f = 1 M Hz;V R = 4 V 7 8 8.5 Capacitance Ratio C 1V /C 4V S eries Resistance rs 3 1.8 V R = 1V , f = 470 M Hz Unit nA pF 2.0 0.22 0.4 Marking Marking TL www.kexin.com.cn 1