Diodes SMD Type Silicon Epitaxial Planar Diode 1SV313 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C0.5V/C0.25V=2.1(Typ.) Low Series Resistance:rs=0.35 +0.1 2.6-0.1 1.0max (Typ.) 0.375 0.475 +0.05 0.1-0.02 Useful for Small Size Tuner Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Junction Temperature Storage Temperature Range Symbol Value Unit VR 10 V Tj 125 T stg -55 to +125 Electrical Characteristics Ta = 25 Conditions Min Reverse Voltage Param eter Sym bol VR IR = 1 10 Reverse Current IR V R = 10 V Capacitance A Typ Max V 3 C 0.5V f = 1 MHz;V R = 0.5 V 7.3 8.4 C 0.25V f = 1 MHz;V R = 0.25 V 2.75 3.4 Capacitance Ratio C 0.5V /C 0.25V Series Resistance rs 2.4 V R = 1V, f = 470 MHz Unit nA pF 2.5 0.35 Marking Marking V6 www.kexin.com.cn 1