Diodes SMD Type Silicon Epitaxial Planar Diode 1SV216 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features +0.1 2.6-0.1 0.375 +0.05 0.1-0.02 0.475 1.0max Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Peak Reverse Voltage Symbol Value Unit VR 30 V V RM Junction Temperature Storage Temperature Range 35 (R L = 10K ) Tj 125 T stg -55 to +125 V Electrical C haracteristics T a = 25 P aram eter S ym bol Conditions M in 30 Reverse V oltage VR IR = 1 Reverse Current IR V R = 28 V Capacitance A Typ M ax Unit 10 nA V C 2V f = 1 M Hz;V R = 2 V 10.5 16 C 10V f = 1 M Hz;V R = 10 V 3.3 5.7 2.5 3.4 Capacitance Ratio C 2V /C 10V S eries Resistance rs V R = 5V , f = 470 M Hz 0.55 pF 1.2 Marking Marking T4 www.kexin.com.cn 1