Diodes SMD Type Silicon Epitaxial Planar Diode 1SV304 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V=3.0(Typ.) Low Series Resistance:rs=0.27 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maxim um Ratings Ta = 25 Parameter Reverse Voltage Junction Temperature Storage Temperature Range Symbol Value Unit VR 10 V Tj 125 T stg -55 to +125 Electrical C haracteristics T a = 25 P aram eter S ym bol Conditions M in 10 Typ M ax Unit 3 nA V Reverse V oltage VR IR = 1 Reverse Current IR V R = 10 V C 1V f = 1 M Hz;V R = 1 V 17.3 18.3 19.3 C 4V f = 1 M Hz;V R = 4 V 5.3 6.1 6.6 2.8 3 Capacitance Capacitance Ratio C 1V /C 4V S eries Resistance rs A V R = 1V , f = 470 M Hz 0.27 pF 0.32 Marking Marking TV www.kexin.com.cn 1