Transistors IC SMD Type Medium power transistor 2SA1900 Features Low saturation voltage, typically VCE(sat) = ?0.15V at IC / IB = ?500mA / ?50mA PC=2W (on 40X40X0.7mm ceramic board) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter Voltage VCEO -60 V Collector-base Voltage VCBO -50 V Emitter-base Voltage VEBO -5 V Collector current IC -1 A -2 A(Pulse) *1 0.5 W 2 W *2 Collector power dissipation PC Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 *1 Single pulse Pw=20ms, Duty=1/2 *2 When mounted on a 40X40X0.7mm seramic board. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltae BVCBO IC = -50µA -60 V Collector-emitter breakdown voltage BVCEO IC = -1mA -50 V Emitter-base breakdown voltage -5 BVEBO IE = -50µA Collector cutoff current ICBO VCB = -40V -0.1 ìA Emitter cutoff current IEBO VEB = -4V -0.1 ìA -0.4 V Collector-Emitter Saturation Voltage DC current transfer ratio V VCE(sat) IC/IB = -500mA/-50mA hFE Transition frequency fT Output Capacitance Cob VCE/IC = -3V/-0.5A 120 270 VCE = -5V , IE = 50mA , f=100MHz 150 MHz VCB = -10V , IE = 0A , f=1MHz 20 pF Marking Marking ALQ www.kexin.com.cn 1