KEXIN 2SA1900

Transistors
IC
SMD Type
Medium power transistor
2SA1900
Features
Low saturation voltage, typically VCE(sat) = ?0.15V at IC /
IB = ?500mA / ?50mA
PC=2W (on 40X40X0.7mm ceramic board)
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-emitter Voltage
VCEO
-60
V
Collector-base Voltage
VCBO
-50
V
Emitter-base Voltage
VEBO
-5
V
Collector current
IC
-1
A
-2
A(Pulse) *1
0.5
W
2
W *2
Collector power dissipation
PC
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
*1 Single pulse Pw=20ms, Duty=1/2
*2 When mounted on a 40X40X0.7mm seramic board.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltae
BVCBO
IC = -50µA
-60
V
Collector-emitter breakdown voltage
BVCEO
IC = -1mA
-50
V
Emitter-base breakdown voltage
-5
BVEBO
IE = -50µA
Collector cutoff current
ICBO
VCB = -40V
-0.1
ìA
Emitter cutoff current
IEBO
VEB = -4V
-0.1
ìA
-0.4
V
Collector-Emitter Saturation Voltage
DC current transfer ratio
V
VCE(sat) IC/IB = -500mA/-50mA
hFE
Transition frequency
fT
Output Capacitance
Cob
VCE/IC = -3V/-0.5A
120
270
VCE = -5V , IE = 50mA , f=100MHz
150
MHz
VCB = -10V , IE = 0A , f=1MHz
20
pF
Marking
Marking
ALQ
www.kexin.com.cn
1