Transistors IC SMD Type Medium Power Transistor 2SD1484K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. 0.55 High current.(IC=5A). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current * IC 0.5 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=100ìA 50 V Collector-emitter breakdown voltage BVCEO IC=1mA 50 V Emitter-base breakdown voltage BVEBO IE=100ìA 5 V ICBO VCB=30V IEBO VEB=4V Collector cutoff current Emitter cutoff current VCE(sat) IC/IB=150mA/15mA Collector-emitter saturation voltage DC current transfer ratio hFE Output capacitance fT Transition frequency Cob VCE=3V, IC=0.01A 120 0.5 ìA 0.5 ìA 0.4 V 390 VCE=5V, IE= -20mA, f=100MHz 250 MHz VCB=10V, IE=0A, f=1MHz 6.5 pF hFE Classification Marking YQ YR hFE 120 270 180 390 www.kexin.com.cn 1