KEXIN 2SD1484K

Transistors
IC
SMD Type
Medium Power Transistor
2SD1484K
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.
0.55
High current.(IC=5A).
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current *
IC
0.5
A
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=100ìA
50
V
Collector-emitter breakdown voltage
BVCEO
IC=1mA
50
V
Emitter-base breakdown voltage
BVEBO
IE=100ìA
5
V
ICBO
VCB=30V
IEBO
VEB=4V
Collector cutoff current
Emitter cutoff current
VCE(sat) IC/IB=150mA/15mA
Collector-emitter saturation voltage
DC current transfer ratio
hFE
Output capacitance
fT
Transition frequency
Cob
VCE=3V, IC=0.01A
120
0.5
ìA
0.5
ìA
0.4
V
390
VCE=5V, IE= -20mA, f=100MHz
250
MHz
VCB=10V, IE=0A, f=1MHz
6.5
pF
hFE Classification
Marking
YQ
YR
hFE
120 270
180 390
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