Transistors SMD Type Medium Power Transistor 2SD1766 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 2.50-0.1 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 Low VCE(sat), VCE(sat) = 0.5V (typical) +0.1 0.80-0.1 Features +0.1 4.00-0.1 +0.1 1.80-0.1 +0.1 3.00-0.1 1. Base +0.1 0.40-0.1 (IC = 2A, IB = 0.2A). 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V 2 A Collector current IC 1 IC (Pulse) * 2.5 A PC 0.5 W PC *2 2 W Collector power dissipation Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *1. Pw=20ms. *2. 40 40 0.7mm Ceramic board. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage BVCBO IC=50ìA 40 V Collector-emitter voltage BVCEO IC=1mA 32 V Emitter-base voltage 5 BVEBO IE=50ìA Collector cutoff current ICBO VCB=20V 1 ìA Emitter cutoff current IEBO VEB=4V 1 ìA hFE VCE=3V,IC=0.5A Forward current transfer ratio VCE(sat) IC=2A,IB=0.2A Collector-emitter saturation voltage Transition frequency fT Output capacitance Cob V 82 390 0.5 0.8 V VCE=5V, IE= -500mA, f=100MHz 100 MHz VCB=10V, IE=0A, f=1MHz 30 pF hFE Classification DB Marking Rank P Q R hFE 82 180 120 270 180 390 www.kexin.com.cn 1