Transistors IC SMD Type Power Transistor 2SD2444K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 IC = 1A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 15 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 6 V Collector current IC 1 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Single pulse Pw=100ms. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 15 V Collector-emitter breakdown voltage BVCEO IC=1mA 15 V Emitter-base breakdown voltage BVEBO IE=50ìA 6 V Collector cutoff current ICBO VCB=12V 0.5 ìA Emitter cutoff current IEBO VEB=5V 0.5 ìA 0.3 V Collector-emitter saturation voltage DC current transfer ratio VCE(sat) IC/IB=400mA/20mA hFE Output capacitance fT Transition frequency Cob VCE=2V, IC=50mA 180 390 VCE=2V, IE= -50mA, f=100MHz 200 MHz VCB=10V, IE=0, f=1MHz 15 pF hFE Classification Marking BSR hFE 180 390 www.kexin.com.cn 1