Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD1249, 2SD1249A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High collector-base voltage (Emitter open) VCBO +0.15 5.55 -0.15 Features 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage (Emitter open) Symbol 2SD1249 VCBO 2SD1249A Collector-emitter voltage 2SD1249 (Base open) 2SD1249A VCEO Rating Unit 350 V 400 V 250 V 300 V VEBO 5 V Collector current IC 0.75 A Peak collector current ICP 1.5 A Emitter-base voltage (Collector open) Collector power dissipation PC 35 W 1.3 Ta = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SD1249, 2SD1249A Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter voltage (Base open) 2SD1249 VCEO IC = 30 mA, IB = 0 2SD1249A Collector-emitter cutoff 2SD1249 current (E-B short) 2SD1249A Collector-emitter cutoff current (Base open) 2SD1249 ICES ICEO 2SD1249A Emitter-base cutoff current (Collector open) IEBO Forward current transfer ratio hFE Base-emitter voltage Collector-emitter saturation voltage Min Typ Max Unit 250 V 300 V VCE = 350 V,VBE = 0 1 mA VCE = 400 V,VBE = 0 1 mA VCE = 150 V,IB = 0 1 mA VCE = 200 V,IB = 0 1 mA VEB = 5 V,IC = 0 1 mA VCE = 10 V, IC = 0.3 A 40 VCE = 10 V, IC = 1 A 10 VBE VCE = 10 V,IC = 1 A VCE(sat) IC = 1 A, IB = 0.2 A 250 1.5 1.0 V V Transition frequency fT VCE = 10 V, IC = 0.2 A, f = 10 MHz 30 MHz Turn-on time ton IC = 1 A 0.5 ìs Strage time tstg IB1 = 0.1 A, IB2 = ? 0.1 A 2.0 ìs VCC = 50 V 0.5 ìs Fall time tf hFE Classification 2 Testconditons Rank R Q P hFE 40 to 90 70 to 150 120 to 250 www.kexin.com.cn