Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD2453 TO-252 Features 6.50 +0.2 5.30-0.2 High forward current transfer ratio hFE. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low collector-emitter saturation voltage VCE(sat). 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Collector current IC 2 A Peak collector current ICP 4 A Base current IB 1 A 1 W 10 W Collector power dissipation Ta = 25 PC Tc = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max 60 Unit Collector-emitter voltage VCEO IC = 25mA, IB = 0 V Collector-base cutoff curent ICBO VCB = 80 V,IE = 0 Collector cutoff curent ICEO VCE = 40 V,IB = 0 100 ìA Emitter-base cutoff current IEBO VEB = 6 V, IC = 0 100 ìA Forward current transfer ratio hFE VCE = 4 V, IC = 0.5 A 100 500 2500 VCE(sat) IC = 2 A, IB = 0.05 A Collector-emitter saturation voltage Transition frequency VCE = 12 V, IC = 0.2 A , f = 10 MHz fT ìA 1 50 V MHz hFE Classification Rank Q R S hFE 500 1000 800 1500 1200 2500 www.kexin.com.cn 1