Transistors SMD Type NPN Silicon Triple Diffused Transistor 2SC3496A +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 Satisfactory linearity of forward current transfer ratio hFE +0.28 1.50 -0.1 +0.2 9.70 -0.2 High collector-base voltage (Emitter open) VCBO +0.15 0.50 -0.15 High-speed switching 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 1000 V Collector-emitter voltage VCES 1000 V Collector-emitter voltage VCEO 900 V Emitter-base voltage (Collector open) VEBO 7 V IB 0.3 A Collector current IC 1 A Peak collector current ICP 2 A Base current Collector power dissipation TC = 25 30 PC W 1.3 Ta = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max 900 Unit Collector-emitter voltage VCEO IC = 1 mA, IB = 0 Collector-base cutoff current ICBO VCB = 1000 V, IE = 0 50 ìA Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0 50 ìA Forward current transfer ratio hFE VCE = 5 V, IC = 0.05 A 6 VCE = 5 V, IC = 0.5 A 3 V Collector-emitter saturation voltage VCE(sat) IC = 0.2 A, IB = 0.04 A 1.5 V Base-emitter saturation voltage VBE(sat) IC = 0.2 A, IB = 0.04 A 1.0 V fT VCE = 10 V, IC = 0.05 A, f = 1 MHz Turn-on time ton IC = 0.2 A 1.0 ìs Storage time tstg IB1 = 0.04 A, IB2 = -0.08 A 3.0 ìs 1 ìs Transition frequency Fall time tf VCC = 250 V 4 MHz www.kexin.com.cn 1