Transistors SMD Type Silicon NPN Triple Diffusion Junction Type 2SD1252,2SD1252A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Power transistors. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Symbol 2SD1252 VCBO 2SD1252A Collector-emitter voltage 2SD1252 Rating Unit 60 V 80 V 60 V 80 V VEBO 6 V Collector current IC 3 A Peak collector current ICP 5 A 1.3 W 35 W VCEO 2SD1252A Emitter-base voltage Collector power dissipation Ta = 25 PC Tc = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SD1252,2SD1252A Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter voltage 2SD1252 VCEO Testconditons IC = 30 mA, IB = 0 2SD1252A Base-emitter voltage VBE Collector-emitter cutoff current 2SD1252 ICES 2SD1252A Collector-emitter cutoff current 2SD1252 ICEO 2SD1252A Emitter-base cutoff current IEBO Forward current transfer ratio hFE Collector-emitter saturation voltage fT Unit V 80 V 1.8 V VCE = 60 V, VBE = 0 200 ìA VCE = 80 V, VBE = 0 200 ìA VCE = 30 V, IB = 0 300 ìA VCE = 40 V, IB = 0 300 ìA 1 mA VCE = 4 V, IC = 1 A 40 VCE = 4 V, IC = 3 A 10 250 VCE(sat) IC = 3 A, IB = 0.375 A 2SD1252 Max VCE = 4 V, IC = 3 A VCE = 5 V, IC = 0.5 A, f = 10 MHz 2SD1252A 1.2 V 30 MHz 25 MHz Turn-on time ton IC=1A 0.5 ìs Storage time tstg IB1=-IB2=0.1 A 2.5 ìs VCC=50V 0.4 ìs Fall time tf hFE Classification 2 Typ 60 VEB = 6 V, IC = 0 Forward current transfer ratio Transition frequency Min Rank R Q P hFE 40 90 70 150 120 250 www.kexin.com.cn