KEXIN 2SC4755

Transistors
IC
SMD Type
Silicon NPN Epitaxial Planar Type
2SC4755
Features
High-speed switching.
Low collector to emitter saturation voltage VCE(sat).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
25
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Peak collector current
ICP
300
mA
Collector current
IC
200
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
IC
SMD Type
2SC4755
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 10V, IE = 0
0.1
ìA
Emitter cutoff current
IEBO
VEB = 4V, IC = 0
0.1
ìA
Forward current transfer ratio
hFE
VCE = 1V, IC = 10mA
40
200
Collector-emitter saturation voltage
VCE(sat) IC = 10mA, IB = 1mA
0.17
0.25
V
Base-emitter saturation voltage
VBE(sat) IC = 10mA, IB = 1mA
0.76
1.0
V
Transition frequency
fT
VCB = 10V, IE = -10mA, f = 200MHz
200
500
MHz
Collector output capacitance
Cob
Turn-on time
ton
17
ns
Turn-off time
toff
15
ns
Storage time
tstg
7
ns
VCB = 10V, IE = 0, f = 1MHz
hFE Classification
DV
Marking
2
Min
Rank
P
Q
R
hFE
40 80
60 120
90 200
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2
4
pF