Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC4755 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Peak collector current ICP 300 mA Collector current IC 200 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors IC SMD Type 2SC4755 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 0.1 ìA Emitter cutoff current IEBO VEB = 4V, IC = 0 0.1 ìA Forward current transfer ratio hFE VCE = 1V, IC = 10mA 40 200 Collector-emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.17 0.25 V Base-emitter saturation voltage VBE(sat) IC = 10mA, IB = 1mA 0.76 1.0 V Transition frequency fT VCB = 10V, IE = -10mA, f = 200MHz 200 500 MHz Collector output capacitance Cob Turn-on time ton 17 ns Turn-off time toff 15 ns Storage time tstg 7 ns VCB = 10V, IE = 0, f = 1MHz hFE Classification DV Marking 2 Min Rank P Q R hFE 40 80 60 120 90 200 www.kexin.com.cn 2 4 pF