KEXIN 2SA1739

Transistors
IC
SMD Type
Silicon PNP Epitaxial Planar Type
2SA1739
Features
High speed switching.
Low collector-emitter saturation voltage VCE(sat).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-15
V
Collector-emitter voltage
VCEO
-15
V
Emitter-base voltage
VEBO
-4
V
Collector current
IC
-50
mA
Peak collector current
ICP
-100
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Max
Unit
Collector-base cutoff current
Parameter
Symbol
ICBO
VCB = -8 V, IE = 0
-0.1
ìA
Emitter-base cutoff current
IEBO
VCE = -3 V, IC = 0
-0.1
ìA
hFE
VCE = -1 V, IC = -10 mA
VCE(sat)
IC = -10 mA, IB = -1 mA
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
fT
Testconditons
VCB = -10 V, IE = 10 mA, f = 200 MHz
Min
Typ
50
150
-0.1
800
-0.2
V
1500
MHz
1
pF
Collector output capacitance
Cob
Turn-on time
ton
12
ns
Turn-off time
toff
20
ns
Storage time
tstg
19
ns
VCB = -5 V, IE = 0, f = 1 MHz
hFE Classification
AX
Marking
Rank
Q
R
No-rank
hFE
50 120
90 150
50 150
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