Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SA1739 Features High speed switching. Low collector-emitter saturation voltage VCE(sat). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -15 V Collector-emitter voltage VCEO -15 V Emitter-base voltage VEBO -4 V Collector current IC -50 mA Peak collector current ICP -100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector-base cutoff current Parameter Symbol ICBO VCB = -8 V, IE = 0 -0.1 ìA Emitter-base cutoff current IEBO VCE = -3 V, IC = 0 -0.1 ìA hFE VCE = -1 V, IC = -10 mA VCE(sat) IC = -10 mA, IB = -1 mA Forward current transfer ratio Collector-emitter saturation voltage Transition frequency fT Testconditons VCB = -10 V, IE = 10 mA, f = 200 MHz Min Typ 50 150 -0.1 800 -0.2 V 1500 MHz 1 pF Collector output capacitance Cob Turn-on time ton 12 ns Turn-off time toff 20 ns Storage time tstg 19 ns VCB = -5 V, IE = 0, f = 1 MHz hFE Classification AX Marking Rank Q R No-rank hFE 50 120 90 150 50 150 www.kexin.com.cn 1