Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1643 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High collector power dissipation PC. 3 .8 0 High collector to emitter VCEO. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Peak collector current ICP -6 A Base current IB -1 A 40 W 1.3 W Collector power dissipation TC = 25 PC Ta = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base cutoff curent ICBO VCB = -60 V,IE = 0 -100 ìA Collector-emitter cutoff curent ICEO VEB = -40 V,IC = 0 -100 ìA Emitter-base cutoff current IEBO VEB = -6 V, IC = 0 -100 ìA Collector-emitter voltage VCEO IC = -25 mA, IB = 0 -60 VCE = -4 V, IC = -0.5 A 300 Forward current transfer ratio Collector-emitter saturation voltage hFE V 700 VCE(sat) IC = -2 A, IB = -0.05 A Transition frequency fT VCE = -12 V, IC = -0.2 A , f = 10 MHz -1 30 V MHz hFE Classification Rank Q P hFE 300 500 400 700 www.kexin.com.cn 1