Transistors SMD Type Low Frequency Power Amplify Applications 2SA1364 Features High Voltage VCEO = -60V High Collector Current (IC = -1A) High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3444 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1 A Peak Collector Current ICM -2 A Collector Power Dissipation PC 500 mW Jumction temperature Tj 150 Tstg -55 to +150 Storage temperature Range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cut-off Current ICBO VCB = -50V , IE = 0 -0.2 ìA Emitter Cut-off Current IEBO VEB = -4V , IC = 0 -0.2 ìA Collector-Emitter Breakdown Voltage V(BR)CEO IC = -2mA , RBE = -60 V Collector-Base Breakdown Voltage V(BR)CBO IC = -10ìA , IE = 0 -60 V Emitter-Base Breakdown Voltage V(BR)EBO IE = -10ìA , IC = 0 -6 V DC Current Gain VCE = -4V , IC = 100mA hFE VCE(sat) IC = -500mA , IB = -25mA Collector-Emitter Saturation Voltage Transition Frequency fT Collector Output Capacitance Cob 55 300 -0.11 -0.3 V VCE = -2V , IE = 10mA 85 MHz VCB = -10V , IE = 0 , f = 1MHz 22 pF hFE Classification C Marking Rank hFE C 55 D 110 90 E 180 150 300 www.kexin.com.cn 1 Transistors SMD Type 2SA1364 Electrical Characteristics Curves 2 www.kexin.com.cn Transistors SMD Type 2SA1364 www.kexin.com.cn 3