Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD1719 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 High emitter-base voltage (Collector open) VEBO +0.28 1.50 -0.1 +0.2 9.70 -0.2 High forward current transfer ratio hFE which has satisfactory linearity +0.15 0.50 -0.15 Features 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 15 V Collector current IC 6 A Peak collector current ICP 12 A Base current IB 3 A Collector power dissipation PC Ta = 25 40 W 1.3 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector-emitter voltage VCEO IC = 25 mA, IB = 0 Collector-base cutoff curent ICBO VCB = 100 V,IE = 0 Emitter-base cutoff current IEBO VEB = 15 V, IC = 0 Forward current transfer ratio hFE VCE = 4 V, IC = 1 A Min Typ Transition frequency fT Turn-on time ton Storage time tstg Fall time tf VCE = 12 V, IC = 0.5 A , f = 10 MHz IC = 5 A,IB1 = -IB2 = 0.1 A, VCC = 50V Unit V 300 100 ìA 100 ìA 2000 VCE(sat) IC = 5 A, IB = 0.1 A Collector-emitter saturation voltage Max 60 0.5 V 30 MHz 0.3 ìs 1.5 ìs 0.6 ìs hFE Classification Rank Q P hFE 300 1200 800 2000 www.kexin.com.cn 1