KEXIN BAR64-05

Diodes
SMD Type
Silicon PIN Diode
BAR64;BAR64-04
BAR64-05;BAR64-06
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
RF resistor for RF attenuator and swirches
0.55
High voltage current controlled
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Freqency range above 1 MHz
+0.05
0.1-0.01
+0.1
0.97-0.1
Low resistance and short carrier lifetime
0-0.1
+0.1
0.38-0.1
For frequencies up to 3 GHz
1.Base
2.Emitter
3.collector
A b s o lu te M a x im u m R a tin g s T a = 2 5
S ym bol
V a lu e
U n it
R e v e rs e v o lta g e
P a ra m e te r
VR
200
V
F o rw a rd c u rre n t
IF
100
mA
P to t
250
mW
T o ta l p o w e r d is s ip a tio n
BAR64
TS
90
B A R 6 3 -0 4 ,-0 5 ,-0 6
TS
250
65
Tj
150
O p e ra tin g te m p e ra tu re ra n g e
T op
-5 5 to + 1 5 0
S to ra g e te m p e ra tu re ra n g e
T s tg
-5 5 to + 1 5 0
J u n c tio n te m p e ra tu re
J u n c tio n - a m b ie n t
1)
R th J A
BAR64
B A R 6 4 -0 4 ,-0 5 ,-0 6
320
K /W
500
J u n c tio n - s o ld e rin g p o in t
R th J S
BAR64
B A R 6 4 -0 4 ,-0 5 ,-0 6
240
K /W
340
N o te
1 . P a c k a g e m o u n te d o n a lu m in a 1 5 m m
1 6 .7 m m
0 .7 m m
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1
Diodes
SMD Type
BAR64;BAR64-04
BAR64-05;BAR64-06
Electrical Characteristics Ta = 25
Parameter
Breakdown voltage
Symbol
Test Condition
V (BR)
IR = 5
A
Typ
Max
Unit
1.1
V
0.35
pF
200
V
Forward voltage
VF
IF = 50 mA
Diode capacitance
CT
V R = 20 V , f = 1 MHz
0.23
IF = 1 mA, f = 100 MHz
12.5
20
Forward resistance
rf
IF = 10 mA, f = 100 MHz
2.1
3.8
IF = 100 mA, f = 100 MHz
0.85
1.35
Charge carrier life time
ôS
IF = 10 mA, IR = 6 mA,IR = 3 mA
1.55
s
Series inductance
LS
1.4
nH
Marking
2
Min
Type
BAR64
BAR64-04
BAR64-05
BAR64-06
Marking
Pos
PPs
PRs
PSs
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