Diodes SMD Type Silicon PIN Diode BAR64;BAR64-04 BAR64-05;BAR64-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 RF resistor for RF attenuator and swirches 0.55 High voltage current controlled 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Freqency range above 1 MHz +0.05 0.1-0.01 +0.1 0.97-0.1 Low resistance and short carrier lifetime 0-0.1 +0.1 0.38-0.1 For frequencies up to 3 GHz 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 S ym bol V a lu e U n it R e v e rs e v o lta g e P a ra m e te r VR 200 V F o rw a rd c u rre n t IF 100 mA P to t 250 mW T o ta l p o w e r d is s ip a tio n BAR64 TS 90 B A R 6 3 -0 4 ,-0 5 ,-0 6 TS 250 65 Tj 150 O p e ra tin g te m p e ra tu re ra n g e T op -5 5 to + 1 5 0 S to ra g e te m p e ra tu re ra n g e T s tg -5 5 to + 1 5 0 J u n c tio n te m p e ra tu re J u n c tio n - a m b ie n t 1) R th J A BAR64 B A R 6 4 -0 4 ,-0 5 ,-0 6 320 K /W 500 J u n c tio n - s o ld e rin g p o in t R th J S BAR64 B A R 6 4 -0 4 ,-0 5 ,-0 6 240 K /W 340 N o te 1 . P a c k a g e m o u n te d o n a lu m in a 1 5 m m 1 6 .7 m m 0 .7 m m www.kexin.com.cn 1 Diodes SMD Type BAR64;BAR64-04 BAR64-05;BAR64-06 Electrical Characteristics Ta = 25 Parameter Breakdown voltage Symbol Test Condition V (BR) IR = 5 A Typ Max Unit 1.1 V 0.35 pF 200 V Forward voltage VF IF = 50 mA Diode capacitance CT V R = 20 V , f = 1 MHz 0.23 IF = 1 mA, f = 100 MHz 12.5 20 Forward resistance rf IF = 10 mA, f = 100 MHz 2.1 3.8 IF = 100 mA, f = 100 MHz 0.85 1.35 Charge carrier life time ôS IF = 10 mA, IR = 6 mA,IR = 3 mA 1.55 s Series inductance LS 1.4 nH Marking 2 Min Type BAR64 BAR64-04 BAR64-05 BAR64-06 Marking Pos PPs PRs PSs www.kexin.com.cn