Diodes SMD Type Silicon PIN Diodes BAR60;BAR61 Unit: mm Features RF switch RF attenuator for frequencies above 10 MHz Absolute M axim um R atings T a = 25 P aram eter R everse voltage Forward current Total power dissipation, T S 65 (N ote 1) S ym bol V alue U nit VR 100 V IF 140 mA P tot 250 mW Tj 150 S torage tem perature range T stg -55 to +150 O perating tem perature range T op -55 to +150 Junction tem perature Junction - am bient 1) Junction - soldering point R th JA 580 K /W R th JS 340 K /W N ote 1.U nit R ating.Total R ating = U nit R ating 1.5 Electrical Characteristics Ta = 25 Parameter Symbol Reverse current IR Forward voltage VF CT Diode capacitance Conditions Max Unit V R = 50 V Min Typ 100 nA V R = 100 V 1 IF = 100 mA 1.25 V R = 50 V, f = 1 MHz 0.25 V R = 0, f = 100 MHz 0.2 0.5 A V pF Zero bias conductance gp V R =0 V,f=100 MHz 50 S Charge carrier life time ôL IF = 10 mA, IR = 6 mA 1 S f = 100 MHz, IF = 0.01 mA 2800 IF = 0.1 mA 380 IF = 1.0 mA 45 IF = 10 mA 7 Differential forward resistance rf Marking Type BAR60 BAR61 Marking 60 61 www.kexin.com.cn 1