BAR14-1 / BAR15-1 / BAR16-1 / BAR61... Silicon PIN Diode RF switch, RF attenuator for frequencies above 10 MHz Low distortion faktor Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1 D 2 2 Type BAR14-1 BAR15-1 BAR16-1 BAR61 Package SOT23 SOT23 SOT23 SOT143 D 1 D 2 1 2 1 D 3 D 2 2 Configuration series common cathode common anode PI element LS(nH) 1.8 1.8 1.8 2 Marking L7s L8s L9s 61s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 100 V Forward current IF 140 mA Total power dissipation Ptot 250 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Value Unit TS 65°C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS 340 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Dec-20-2002 BAR14-1 / BAR15-1 / BAR16-1 / BAR61... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics Reverse current nA IR VR = 50 V - - 100 VR = 100 V - - 1000 - 1.05 1.25 Forward voltage VF V IF = 100 mA AC Characteristics Diode capacitance pF CT VR = 0 V, f = 100 MHz - 0.2 - VR = 50 V, f = 1 MHz - 0.25 0.5 - 50 - Zero bias conductance gP S VR = 0 V, f = 100 MHz Forward resistance rf IF = 0.01 mA, f = 100 MHz - 2800 - IF = 0.1 mA, f = 100 MHz - 380 - IF = 1 mA, f = 100 MHz - 45 - IF = 10 mA, f = 100 MHz - 7 - rr 700 1000 - ns WI - 146 - µm Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 I-region width 2 Dec-20-2002 BAR14-1 / BAR15-1 / BAR16-1 / BAR61... Diode capacitance CT = (VR) Forward resistance rf = (IF ) f = Parameter f = 100MHz 1.0 CT BAR 14-1...16-1 EHD07067 10 4 rf pF BAR 14-1...16-1 EHD07066 Ω 10 3 10 2 0.5 f = 1 MHz 10 1 f = 100 MHz 0.0 10 0 20 30 40 V 10 0 10 -2 50 10 0 10 -1 10 1 mA 10 2 ΙF VR Forward current I F = (V F) Forward current IF = (TS ) T A = 25°C BAR14-1, BAR15-1, BAR16-1 10 2 EHD07065 160 mA mA 10 1 10 0 120 TA = -40 ˚C 25 ˚C 85 ˚C 150 ˚C IF ΙF BAR 14-1...16-1 100 80 60 10 -1 40 20 10 -2 0.0 0.5 1.0 V 0 0 1.5 15 30 45 60 75 90 105 120 °C 150 TS VF 3 Dec-20-2002 BAR14-1 / BAR15-1 / BAR16-1 / BAR61... Application circuit for attenuation networks with diode BAR61 50 k Ω +12 V 1 nF V Reg. 1 nF 1 nF 12 k Ω BC 238 1 kΩ 1 nF BAR 61 1 nF 1 kΩ 1 nF Output Input 1 nF 1 nF 5.6 k Ω 4.7 k Ω 1.8 k Ω 2.2 k Ω EHM07026 4 Dec-20-2002