Diodes SMD Type Silicon RF Switching Diode BAR81W SOT-343 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 30 V IF 100 mA P tot 100 mW Diode reverse voltage Forward current Total power dissipation, T S = 103 Tj 150 Operating tem perature range T op -55 to + 125 Storage tem perature range T stg -55 to + 150 Junction tem perature Junction - am bient 1) Junction - soldering point R th JA 200 K/W R th JS 120 K/W Note 1.Package m ounted on alum ina 15m m 16.7m m 0.7m m Electrical Characteristics Ta = 25 Parameter Symbol Test Condition Reverse current IR VR = 20 V Forward voltage VF IF = 100 mA Diode capacitance CT Forward resistance rf Series inductance trr Min Typ 0.93 VR = 1 V, f = 1 MHz 0.6 VR = 3 V, f = 1 MHz 0.57 IF = 5 mA, f = 100 MHz 0.7 0.15 Max Unit 20 nA 1 V pF nH Marking Marking BBs www.kexin.com.cn 1