Diodes SMD Type Silicon Schottky Diode BAT68-03W SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features For mixer applications in the VHF/UHF range +0.1 2.6-0.1 1.0max For high speed switching 0.375 +0.05 0.1-0.02 0.475 Absolute M axim um R atings Ta = 25 Param eter Sym bol Value U nit D iode reverse voltage VR 8 V Forward current IF 130 mA P tot 150 mW Total Power dissipation TS = 95 Junction tem perature O perating tem perature range Storage tem perature Tj 150 T op -65 to +150 T stg -65 to +150 Junction am bient R thJA 445 K/W Junction - soldering point R thJS 365 K/W Electrical Characteristics Ta = 25 Parameter Breakdown voltage Symbol V (BR) Reverse current IR Forward voltage VF Conditions I(BR) = 10 Min A Typ Max 8 V V R = 1 V, T A = 25 0.1 V R = 1 V, T A = 60 1.2 IF = 1 mA IF = 10 mA 340 Unit 318 340 390 500 Diode capacitance CT V R = 0 V, f = 1 MHz 1 Differential forward resistance RF IF = 5 mA 10 A mV pF Forward current I F = f ( TA*; TS) *): mounted on alumina 15mm x 16.7mm x 0.7mm Marking Marking K www.kexin.com.cn 1