KEXIN BAT68-03W

Diodes
SMD Type
Silicon Schottky Diode
BAT68-03W
SOD-323
+0.05
0.85-0.05
+0.05
0.3-0.05
+0.1
1.7-0.1
Unit: mm
+0.1
1.3-0.1
Features
For mixer applications in the VHF/UHF range
+0.1
2.6-0.1
1.0max
For high speed switching
0.375
+0.05
0.1-0.02
0.475
Absolute M axim um R atings Ta = 25
Param eter
Sym bol
Value
U nit
D iode reverse voltage
VR
8
V
Forward current
IF
130
mA
P tot
150
mW
Total Power dissipation
TS = 95
Junction tem perature
O perating tem perature range
Storage tem perature
Tj
150
T op
-65 to +150
T stg
-65 to +150
Junction am bient
R thJA
445
K/W
Junction - soldering point
R thJS
365
K/W
Electrical Characteristics Ta = 25
Parameter
Breakdown voltage
Symbol
V (BR)
Reverse current
IR
Forward voltage
VF
Conditions
I(BR) = 10
Min
A
Typ
Max
8
V
V R = 1 V, T A = 25
0.1
V R = 1 V, T A = 60
1.2
IF = 1 mA
IF = 10 mA
340
Unit
318
340
390
500
Diode capacitance
CT
V R = 0 V, f = 1 MHz
1
Differential forward resistance
RF
IF = 5 mA
10
A
mV
pF
Forward current I F = f ( TA*; TS)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
Marking
Marking
K
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