Diodes SMD Type Silicon Schottky Diode BAT17-04;BAT17-05;BAT17-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 For high-speed switching application 0.55 For mixer applications in VHF/UHF range 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a r a m e te r S ym bol D io d e r e v e r s e v o lta g e F o rw a rd c u rre n t V a lu e U n it VR 4 V IF 130 mA P to t 150 mW T o ta l p o w e r d is s ip a tio n B A T 1 7 -0 4 , B A T 1 7 -0 6 , T s B A T 1 7 - 0 5 ,T s 61 46 J u n c tio n te m p e r a tu r e Tj 150 O p e r a tin g te m p e r a tu r e r a n g e T op - 5 5 to + 1 2 5 S to r a g e te m p e r a tu r e T s tg - 5 5 to + 1 5 0 J u n c tio n - s o ld e r in g p o in t( N o te 1 ) B A T 1 7 -0 4 , B A T 1 7 -0 6 B A T 1 7 -0 5 R th J S 590 K /W 690 N o te 1 .F o r c a lc u la tio n o f R th J A p le a s e r e fe r to A p p lic a tio n N o te T h e r m a l R e s is ta n c e www.kexin.com.cn 1 Diodes SMD Type BAT17-04;BAT17-05;BAT17-06 Electrical Characteristics Ta = 25 Parameter Symbol Breakdown voltage Conditions V (BR) Reverse current I(BR) = 10 IR A Min Typ VF VR = 3 V 0.25 VR = 4 V 10 1.25 200 275 350 IF = 1 mA 250 340 450 IF = 10 mA 350 425 600 20 mV 0.4 0.55 0.75 pF 8 15 ÄV F IF = 1 mA CT V R = 0 , f = 1 MHz Differential forward resistance RF IF = 5 mA, f = 10 kHz Note 1.ÄV F is the difference between lowest and highest VF in multiple diode component. Marking 2 Type BAT17-04 BAT17-05 BAT17-06 Marking 54s 55s 56s www.kexin.com.cn A IF = 0.1 mA Diode capacitance Forward voltage matching(Note 1) Unit V V R = 3 V, TA = 60 Forward voltage Max 4 mV