Diodes SMD Type Silicon Schottky Diode BAT68-04W,BAT68-05W,BAT68-06W Features For mixer applications in VHF/UHF range For high-speed switching application Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Diode reverse voltage VR 8 V Forward current IF 130 mA mW P tot 150 Junction tem perature Tj 150 Storage tem perature T stg -55 to +150 Total power dissipation TS 92 Junction - soldering point(Note 1) R thJS K/W 390 Note 1.For calculation of R thJA please refer to Application Note Therm al Resistance Electrical Characteristics Ta = 25 Param eter Sym bol Breakdown voltage Conditions V (BR) Reverse current I (BR) = 10 A Min Typ 8 0.1 1.2 V R = 1 V, T A = 60 Forward voltage IF = 1 m A VF I F = 10 m A 340 Unit V VR = 1 V IR Max 318 340 390 500 Diode capacitance CT V R = 0 , f = 1 MHz 1 Differential forward resistance RF I F = 5 m A, f = 10 KHz 10 A mV pF Marking Type BAT68-04W BAT68-05W BAT68-06W Marking 84s 85s 86s www.kexin.com.cn 1