Diodes SMD Type High Conductance Ultra Fast Diode MMBD1201;MMBD1203 MMBD1204;MMBD1205 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r W o rk in g In v e rs e V o lta g e S ym bol W V a lu e U n it 50 V A v e ra g e R e c tifie d C u rre n t IO 200 mA D C F o rw a rd C u rre n t IF 600 mA R e c u rre n t P e a k F o rw a rd C u rre n t if 700 mA IV P e a k F o rw a rd S u rg e C u rre n t P u ls e w id th = 1 .0 s e c o n d i f( s u r g e ) P u ls e w id th = 1 .0 m ic ro s e c o n d S to ra g e T e m p e ra tu re R a n g e O p e ra tin g J u n c tio n T e m p e ra tu re T o ta l D e v ic e D is s ip a tio n A A T s tg -5 5 to + 1 5 0 TJ 150 PD 350 2 .8 D e ra te a b o v e 2 5 T h e rm a l R e s is ta n c e , J u n c tio n to A m b ie n t 1 .0 2 .0 R JA 357 mW mW/ /W www.kexin.com.cn 1 Diodes SMD Type MMBD1201;MMBD1203 MMBD1204;MMBD1205 Electrical Characteristics Ta = 25 Parameter Symbol Breakdown voltage Conditions BV Reverse current Max Unit IF = 20 V 25 nA IF = 50 V 50 nA 5 A IR = 100 IR A Min 100 IF = 50 V, T A = 150 VF Forward voltage Diode capacitance CD Reverse recovery time T RR IF = 1.0 mA 550 600 mV IF = 10 mA 660 740 mV IF = 100 mA 820 920 mV IF = 200 mA 0.87 1.0 V IF = 300 mA 1.1 V V R = 0, f = 1.0 MHz 2.0 pF 4.0 ns IF = IR = 10 mA,IRR = 1.0 mA, R L = 100 Marking 2 Type MMBD1201 MMBD1203 MMBD1204 MMBD1205 Marking 24 26 27 28 www.kexin.com.cn V