Diodes SMD Type Silicon Schottky Diode BAT17-04W,BAT17-05W,BAT17-06W Features For mixer applications in VHF/UHF range For high-speed switching application Absolute M axim um Ratings Ta = 25 Param eter Diode reverse voltage Sym bol Value Unit VR 4 V IF 130 mA P tot 150 mW Tj 150 Operating tem perature range T op -55 to +125 Storage tem perature T stg -55 to +150 Forward current Total power dissipation 92 TS Junction tem perature Junction - soldering point(Note 1) R thJS 390 K/W Note 1.For calculation of RthJA please refer to Application Note Therm al Resistance Electrical Characteristics Ta = 25 Param eter Sym bol Breakdown voltage Conditions V (BR) Reverse current I (BR) = 10 IR Min A Typ VF Forward voltage m atching(Note 1) VR = 3 V 0.25 VR = 4 V 10 200 275 350 IF = 1 m A 250 340 450 I F = 10 m A 350 425 600 IF = 1 m A Diode capacitance CT V R = 0 , f = 1 MHz Differential forward resistance RF I F = 5 m A, f = 10 KHz A 1.25 I F = 0.1 m A ÄV F Unit V V R = 3 V, T A = 60 Forward voltage Max 4 0.4 mV 20 mV 0.55 0.75 pF 8 15 Note 1.ÄV F is the difference between lowest and highest V F in m ultiple diode com ponent. Marking Type Marking BAT17-04W BAT17-05W BAT17-06W 54S 55S 56S www.kexin.com.cn 1