Diodes SMD Type Silicon Schottky Diode BAT14-03W SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features DBS mixer application to 12GHz +0.1 2.6-0.1 1.0max Medium barrier type Low capacitance 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Diode reverse voltage VR 4 V Forward current IF 90 mA Operating temperature range Top -55 to+125 Storage temperature Tstg -55 to+150 Ptot 100 Total power dissipation Junction ambient Ts 85 (1) Junction-soldering point RthJA 450 RthJS 690 mW K/W Note: 1.Package mounted on an epoxy pcb 40 mm 40 mm 15 mm/1cm 2 Cu. Electrical Characteristics T a = 25 Param eter Breakdown Voltage I (BR) = 5 Forward voltage IF = 1 m A A Sym bol Min V (BR) 4 VF I F = 10 m A Typ Max Unit V 0.36 0.43 0.52 0.48 0.55 0.66 0.35 Diode capacitance V R = 0; f = 1 MHz CT 0.22 Differential forward resistance I F = 10 m A/50 m A RF 5.5 V pF Marking Marking O www.kexin.com.cn 1