Diodes SMD Type Silicon RF Switching Diode BAT18;BAT18-04 BAT18-05;BAT18-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Features Low-loss VHF/UHF switch above 10 MHz +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Pin diode with low forward resistance 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Symbol Value Unit VR 35 V IF 100 mA T op, T stg -55 to +150 Forward Current Operating and storage temperature range Junction - ambient R th JA K/W 450 Electrical C haracteristics Ta = 25 Sym bol Conditions Forward voltage Param eter VF I F = 100 m A M in Reverse current IR Typ M ax Unit 0.38 1.2 V V R = 20 V 20 V R = 20 V, T A = 60 CT V R = 20 V, f = 1 M Hz 0.75 1 Forward resistance rf I F = 5 m A, f = 100 M Hz 0.4 0.7 Series inductance Ls Diode capacitance nA 200 2 pF nH Marking Type BAT18 BAT18-04 BAT18-05 BAT18-06 Marking A2 AU AS AT www.kexin.com.cn 1