Diodes SMD Type Silicon PIN Diode BA886 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Designed for low IM distortion 1 0.55 Frequency range above 1 M +0.1 1.3-0.1 +0.1 2.4-0.1 Current-controlled RF resistor for switching and attenuating applications 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute M axim um Ratings Ta = 25 Sym bol Value Unit Reverse Voltage Param eter VR 50 V Forward Current IF 50 mA Operating tem perature range T op -55 to +125 Storage tem perature range T stg -55 to +150 Junction am bient R thJA 450 K/W Note: 1. Package m ounted on alum ina 15 m m 16.7 m m 0.7 m m . Electrical Characteristics Ta = 25 Param eter Sym bol Conditions Min Typ Forward Voltage VF I F = 50 m A 1.15 V Reverse Current IR V R = 50 V 50 nA Diode capacitance CT V R = 50 V, f = 1 MHz 0.23 V R = 0 V, f =100 MHz 0.20 Max 0.35 Unit pF f = 100 MHz Forward resistance rf I F = 10 2400 A IF = 1 m A I F = 10 m A Zero bias conductance gp Series inductance LS V R = 0 V, f = 100 MHz 58 6.5 7.8 40 2 10 S nH Marking Marking PC www.kexin.com.cn 1