Diodes SMD Type Schottky Barrier Double Diode BAT74S SOT-363 Unit: mm +0.15 2.3-0.15 Features +0.1 1.25-0.1 0.525 +0.1 1.3-0.1 0.65 Low forward voltage 0.36 Guard ring protected +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Small SMD package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Min Max Unit Per diode continuous reverse voltage VR 30 V continuous forward current IF 200 mA 300 mA 600 mA repetitive peak forward current IFRM non-repetitive peak forward current IFSM storage temperature T stg junction temperature operating ambient temperature tp 1 s; ä 0.5 tp < 10 ms -65 +150 -65 +125 Tj 125 T amb Double diode operation continuous reverse voltage VR continuous reverse voltage VR continuous forward current series connection repetitive peak forward current thermal resistance from junction to ambient R th j-a V 60 V 110 IF IFRM 30 tp 1 s; ä 0.5 (1) mA 200 mA 416 K/W Note 1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in reverse and the other in forward operation at the same moment, total device current is max. 200 mA. www.kexin.com.cn 1 Diodes SMD Type BAT74S Electrical Characteristics Ta = 25 Parameter forward voltage Symbol VF reverse current IR reverse recovery time trr diode capacitance Cd 1. Pulse test: tp = 300 s; ä = 0.02. Marking Marking 2 74 www.kexin.com.cn Max IF = 0.1 mA 200 IF = 1 mA 260 IF = 10 mA 340 IF = 30 mA 420 IF = 100 mA 750 V R = 25 V; note 1 2 when switched from IF = 10 mA to IR = 10 mA; R L = 100 Note Conditions Unit mV A 5 ns 10 pF ;measured at IR = 1 mA f = 1 MHz; V R = 1 V