Diodes SMD Type Schottky Barrier (Double) Diodes 1PS59SB Series SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Guard ring protoected 0.55 Low forward voltage 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Small SMD package. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Continuous reverse voltage Conditions Min VR Continuous forward current IF Repetitive peak forward current IFSM tp 1s; ä 0.5 Max Unit 30 V 200 mA 300 mA Non-repetitive peak forwrad current IFSM tp 10 ms 600 mA Total power dissipation (per package) Ptot Tamb 25 250 mW Storage temperature Tstg Junction temperature Tj -65 +150 125 Electrical Characteristics Ta = 25 Parameter Symbol forward voltage VF reverse current IR Conditions Max IF = 0.1 mA 240 IF = 1 mA 320 IF = 10 mA 400 IF = 30 mA 500 IF = 100 mA 800 VR = 25 V 2 Unit mV A when switched from IF = 10 mA to reverse recovery time trr IR = 10 mA; RL = 100 5 ns 10 pF 500 K/W measured at IR = 1 mA diode capacitance Cd thermal resistance from junction to ambient f = 1 MHz; VR = 1 V Rth j-a Marking Type 1PS59SB10 1PS59SB14 1PS59SB15 1PS59SB16 Marking 10 14 15 16 www.kexin.com.cn 1