Transistors SMD Type NPN Medium Power Transistor BC868 Features High current Two current gain selections 1.2 W total power dissipation. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (open emitter) VCBO 32 V Collector-emitter voltage (open base) VCEO 20 V Emitter-base voltage (open collector) VEBO 5 V Collector current IC 1 A Peak collector current ICM 2 A Peak base current IBM 200 mA 0.5 W Ptot 0.85 W 1.2 W Total power dissipation *1 and *2 *1 and *3 *1 and *4 Storage temperature Tstg -65 to +150 Junction temperature Tj 150 ambient temperature Tamb -65 to +150 Thermal resistance from junction to ambient *1 and *2 250 K/W *1 and *3 147 K/W *1 and *4 104 K/W 20 K/W Thermal resistance from junction to solder point Rth(j-a) Rth(j-s) *1.Refer to SOT89 standard mounting conditions. *2.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint. *3.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. *4.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. www.kexin.com.cn 1 Transistors SMD Type BC868 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Emitter cutoff current IEBO DC current gain BC868 BC868-25 Collector-emitter saturation voltage hFE hFE VCE(sat) VBE Base to emitter voltage Max Unit VCB = 25 V, IE = 0 Testconditons Min Typ 100 nA VCB = 25 V, IE = 0; Tj = 25 10 ìA 100 nA VEB = 5 V, IC = 0 IC = 5 mA; VCE = 10 V 50 IC = 500 mA; VCE = 1 V 85 IC = 1 A; VCE = 1 V 60 IC = 500 mA; VCE = 1 V 160 375 375 IC = 1 A; IB = 100 mA 500 mV IC = 5 mA; VCE = 10 V 700 mV 1 V IC = 1 A; VCE = 1 V Collector capacitance CC IE = Ie = 0; VCB = 10 V; f = 1 MHz Transition frequency fT IC = 50 mA; VCE = 5 V; f = 100 MHz hFE Classification 2 TYPE BC868 BC868-25 Marking CAC CDC www.kexin.com.cn 40 22 pF 170 MHz