Transistors SMD Type PNP High-Voltage Transistor BSP16 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 Features +0.1 3.00-0.1 High voltage (max. 350 V). +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 3 Emitter 4 Collector 4.6 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit collector-base voltage (open emitter) VCBO -350 V collector-emitter voltage (open base) VCEO -300 V emitter-base voltage (open collector) VEBO -6 V IC -200 mA collector current (DC) base current (DC) total power dissipation Tamb 25 * storage temperature junction temperature IB -200 mA Ptot 1.28 W Tstg -65 to 150 Tj 150 Tamb -65 to 150 thermal resistance from junction to ambient * Rth j-a 97 K/W thermal resistance from junction to soldering point Rth j-s 16 K/W operating ambient temperature * . Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. Electrical Characteristics Ta = 25 Max Unit collector cut-off current Parameter Symbol ICBO IE = 0; VCB = -280 V Testconditons Min -100 nA emitter cut-off current IEBO IC = 0; VEB = -6 V -100 nA DC current gain hFE IC = -50 mA; VCE = -10 V 30 Typ 120 IC = -50 mA; IB = -5 mA -2 V collector capacitance Cc IE = ie = 0; VCB = -10 V; f = 1 MHz 15 pF transition frequency fT IC = -10 mA; VCE = -10 V; f = 100 MHz collector-emitter saturation voltage VCEsat 15 MHz www.kexin.com.cn 1