KEXIN BCP68

Transistors
SMD Type
NPN Medium Power Transistor
BCP68
SOT-223
Unit: mm
0.1max
+0.05
0.90-0.05
High current.
Three current gain selections.
+0.1
3.00-0.1
+0.15
1.65-0.15
+0.2
3.50-0.2
+0.2
6.50-0.2
Features
+0.2
0.90-0.2
+0.3
7.00-0.3
1.4 W total power dissipation.
4
1
1 base
3
2
+0.1
0.70-0.1
2.9
4.6
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
32
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
1
A
Peak collector current
ICM
2
A
Peak base current
IBM
200
mA
0.625
W
*2
1
W
*3
1.4
W
Total power dissipation
*1
Storage temperature
Ptot
Tstg
Junction temperature
Operating ambient temperature
-65 to +150
Tj
150
Tamb
-65 to +150
Thermal resistance from junction to ambient *
Tamb
25
200
K/W
*2
125
K/W
*3
89
K/W
15
K/W
*1
Thermal resistance from junction to solder point
Rth(j-a)
Rth(j-s)
*1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
*2 Device mounted on a FR4 PCB; single-sided copper; tinplated; 1 cm2 collector mounting pad.
*3 Device mounted on a FR4 PCB; single-sided copper; tinplated; 6 cm2 collector,mounting pad.
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1
Transistors
SMD Type
BCP68
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
DC current gain
BCP68
hFE
DC current gain
BCP68-25
VCEsat
Collector-emitter saturation voltage
Base-emitter voltage
VBE
Testconditons
Min
Typ
Max
Unit
100
nA
IE = 0 A; VCB = 25 V; Tj = 150
10
ìA
IC = 0 A; VEB = 5 V
100
nA
IE = 0 A; VCB = 25 V
VCE = 10 V; IC = 5 mA
50
VCE = 1 V; IC = 500 mA
85
VCE = 1 V; IC = 1 A
60
VCE = 1 V; IC = 500 mA
160
375
375
IC = 100 mA; IB = 1 A;
500
mV
VCE = 10 V; IC = 5 mA
700
mV
1
V
VCE = 1 V; IC = 1 A
Collector capacitance
Cc
IE = ie = 0 A; VCB = 10 V; f = 1 MHz
Transition frequency
fT
IC = 50 mA; VCE = 5 V; f = 100 MHz
hFE Classification
2
TYPE
BCP68
BCP68-25
Marking
BCP68
BCP68/25
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40
22
pF
170
MHz