Transistors SMD Type NPN Medium Power Transistor BCP68 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 High current. Three current gain selections. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 1.4 W total power dissipation. 4 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 32 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 1 A Peak collector current ICM 2 A Peak base current IBM 200 mA 0.625 W *2 1 W *3 1.4 W Total power dissipation *1 Storage temperature Ptot Tstg Junction temperature Operating ambient temperature -65 to +150 Tj 150 Tamb -65 to +150 Thermal resistance from junction to ambient * Tamb 25 200 K/W *2 125 K/W *3 89 K/W 15 K/W *1 Thermal resistance from junction to solder point Rth(j-a) Rth(j-s) *1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. *2 Device mounted on a FR4 PCB; single-sided copper; tinplated; 1 cm2 collector mounting pad. *3 Device mounted on a FR4 PCB; single-sided copper; tinplated; 6 cm2 collector,mounting pad. www.kexin.com.cn 1 Transistors SMD Type BCP68 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Emitter cutoff current IEBO DC current gain BCP68 hFE DC current gain BCP68-25 VCEsat Collector-emitter saturation voltage Base-emitter voltage VBE Testconditons Min Typ Max Unit 100 nA IE = 0 A; VCB = 25 V; Tj = 150 10 ìA IC = 0 A; VEB = 5 V 100 nA IE = 0 A; VCB = 25 V VCE = 10 V; IC = 5 mA 50 VCE = 1 V; IC = 500 mA 85 VCE = 1 V; IC = 1 A 60 VCE = 1 V; IC = 500 mA 160 375 375 IC = 100 mA; IB = 1 A; 500 mV VCE = 10 V; IC = 5 mA 700 mV 1 V VCE = 1 V; IC = 1 A Collector capacitance Cc IE = ie = 0 A; VCB = 10 V; f = 1 MHz Transition frequency fT IC = 50 mA; VCE = 5 V; f = 100 MHz hFE Classification 2 TYPE BCP68 BCP68-25 Marking BCP68 BCP68/25 www.kexin.com.cn 40 22 pF 170 MHz