Transistors SMD Type PNP Medium Power Transistor BC869 Features High current. Three current gain selections. 1.2 W total power dissipation. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -32 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current IC -1 A Peak collector current ICM -2 A Peak base current IBM -200 mA 0.5 W 0.85 W 1.2 W Total power dissipation *1 and *2 *1 and *3 Ptot *1 and *4 Storage temperature Tstg Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Tj 150 Ramb -65 to +150 *1 and *2 *1 and *3 Rth(j-a) *1 and *4 Thermal resistance from junction to solder point -65 to +150 Rth(j-s) 250 K/W 147 K/W 104 K/W 20 K/W *1.Refer to SOT89 standard mounting conditions. *2.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint. *3.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. *4.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. www.kexin.com.cn 1 Transistors SMD Type BC869 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Emitter cutoff current IEBO DC current gain BC868 hFE Testconditons Min Typ VCB = -25 V, IE = 0 -100 nA -10 ìA VEB = -5 V, IC = 0 -100 nA IC = -5 mA; VCE = -10 V 50 IC = -500 mA; VCE = -1 V 85 IC = -1 A; VCE = -1 V 60 375 hFE IC = -500 mA; VCE = -1 V 100 250 BC869-25 hFE IC = -500 mA; VCE = -1 V 160 375 VCE(sat) Base to emitter voltage VBE IC = -1 A; IB = -100 mA -500 mV IC = -5 mA; VCE = -10 V -700 mV -1 V IC = -1 A; VCE = -1 V Collector capacitance CC IE = Ie = 0; VCB = -10 V; f = 1 MHz Transition frequency fT IC = -50 mA; VCE = -5 V; f = 100 MHz hFE Classification TYPE BC869 BC869-16 BC869-25 Marking CEC CGC CHC www.kexin.com.cn Unit VCB = -25 V, IE = 0; Tj = 25 BC868-16 Collector-emitter saturation voltage 2 Max 40 28 pF 140 MHz