Transistors SMD Type NPN Silicon Epitaxial Transistor BSP19A SOT-223 Unit: mm +0.2 3.50-0.2 6.50 Features +0.1 3.00-0.1 High Voltage: V(BR)CEO of 250 and 350 Volts. +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 Available in 12 mm Tape and Reel 1 Base 1 2 Collector 3 2 3 Emitter +0.1 0.70-0.1 2.9 4 Collector 4.6 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage (Open Base) VCEO 350 V Collector-Base Voltage (Open Emitter) VCBO 400 V Emitter-Base Voltage (Open Collector) VEBO 5 V IC 1000 mA Collector Current (DC) Total Power Dissipation @ TA = 25 * PD Derate above 25 Storage Temperature Range Junction Temperature Thermal Resistance from Junction-to-Ambient Maximum Temperature for Soldering Purposes Watts 6.4 mW/ Tstg -65 to 150 TJ 150 RèJA 156 TL Time in Solder Bath 0.8 /W 260 10 Sec * Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint. Electrical Characteristics Ta = 25 Parameter Symbol Collector-Emitter Breakdown Voltage Testconditons Min Typ Max Unit V(BR)CEO IC = 1.0 mA, IB = 0 Collector-Base Cutoff Current ICBO VCB = 400 V, IE = 0 20 nA Emitter-Base Cutoff Current IEBO VEB = 5.0 V, IC = 0 10 mA DC Current Gain * hFE IC = 20 mA, VCE = 10 V 40 IC = 10 mA, VCE = 10 V, f = 5.0 MHz 70 350 V MHz Current-Gain — Bandwidth Product * fT Collector-Emitter Saturation Voltage * VCE(sat) IC = 50 mA, IB = 4.0 mA 0.5 V Base-Emitter Saturation Voltage * VBE(sat) IC = 50 mA, IB = 4.0 mA 1.3 V * Pulse Test: Pulse Width 300 ìs, Duty Cycle = 2.0% Marking Marking SP19A www.kexin.com.cn 1