Transistors SMD Type NPN High-Voltage Transistor BF822W Features Low current (max. 50 mA) High voltage (max. 250 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (open emitter) VCBO 250 V Collector-emitter voltage (open base) VCEO 250 V Emitter-base voltage (open collector) VEBO 5 V Collector current IC 50 mA Peak collector current ICM 100 mA Peak base current IBM 50 mA mW Ptot 200 Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 625 Total power dissipation * (Tamb 25 ;) K/W * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Testconditons Min Typ Max Unit IE = 0; VCB = 200 V 10 nA ìA IE = 0; VCB = 200 V; Tj = 150 10 Emitter cutoff current IEBO IC = 0; VEB = 5 V 50 nA DC current gain hFE IC = 25 mA; VCE = 20 V IC = 30 mA; IB = 5 mA 600 mV IC = 0; VCB = 30 V; f = 1 MHz 1.6 pF Collector-emitter saturation voltage * Feedback capacitance Cre Transition frequency * Pulse test: tp VCEsat fT 300 ìs; ä IC = 10 mA; VCE = 10 V; f=100MHz 50 60 MHz 0.02. Marking Marking 1W www.kexin.com.cn 1