Product specification MMBT6517 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 NPN Silicon +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-emitter voltage Parameter VCEO 350 V Collector-base voltage VCBO 350 V Emitter-base voltage VEBO 5 V Base current IB 250 mA Collector current-continuous IC 500 mA PD 225 Total device dissipation FR-5 board *1 @TA = 25 1.8 Derate above 25 Thermal resistance, junction-to-ambient mW mW/ RèJA 556 /W PD 300 mW RèJA 417 TJ, Tstg -55 to +150 Total device dissipation alumina substrate *2 @TA = 25 2.4 derate above 25 Thermal resistance, junction-to-ambient Junction and storage temperature mW/ /W * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification MMBT6517 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter breakdown voltage * V(BR)CEO IC = 1.0 mA, IB = 0 350 V Collector-base breakdown voltage V(BR)CBO IC = 100 ìA, IE = 0 350 V Emitter-base breakdown voltage V(BR)EBO IE = 10 ìA, IC = 0 6 V Collector cutoff current ICBO VCB = 250 V, IE = 0 50 nA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 50 nA DC current gain * hFE Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter on voltage VCE(sat) IC = 1.0 mA, VCE = 10 V 20 IC = 10 mA, VCE = 10 V 30 IC = 30 mA, VCE = 10 V 30 200 IC = 50 mA, VCE = 10 V 20 200 IC = 100 mA, VCE = 10 V 15 IC = 10 mA, IB = 1.0 mA 0.30 V IC = 20 mA, IB = 2.0 mA 0.35 V IC = 30 mA, IB = 3.0 mA 0.50 V IC = 50 mA, IB = 5.0 mA 1.0 V IC = 10 mA, IB = 1.0 mA 0.75 V VBE(sat) IC = 20 mA, IB = 2.0 mA 0.85 V IC = 30 mA, IB = 3.0 mA 0.90 V 2 V VBE(on) IC = 100 mA, VCE = 10 V Current-gain - bandwidth product fT 200 MHz Collector-base capacitance Ccb IC = 10 mA, VCE = 20 V, f = 20 MHz VCB = 20 V, IE = 0, f = 1.0 MHz 40 6 pF Emitter-base capacitance Ceb VCB = 0.5 V, IE = 0, f = 1.0 MHz 80 pF * Pulse Test: Pulse Width = 300 ìs, Duty Cycle=2.0%. Marking Marking 1Z http://www.twtysemi.com [email protected] 4008-318-123 2of 2