Diodes SMD Type Silicon Schottky Barrier Diode HRW0202B SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 high effifiency rectifying. 0.55 Low forward voltage drop and suitable for +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 MPAK package is suittable for high density +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 surface mounting and high speed assembly. 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e p e titiv e p e a k re v e rs e v o lta g e A v e ra g e re c tifie d c u rre n t N o n -re p e titiv e p e a k fo rw a rd s u rg e c u rre n t J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re S ym bol V a lu e U n it V RRM 20 V IO 200 mA IF S M 3 A Tj 125 T s tg -5 5 to + 1 2 5 Electrical Characteristics Ta = 25 Param eter Forward voltage Reverse current Therm al resistance Sym bol Conditions VF I F = 100 m A IR V R = 20 V T sh( j-a ) Polyim ide board Min Typ Max Unit 0.42 V 10 400 A /W Marking Marking S18 www.kexin.com.cn 1