Diodes SMD Type Silicon Schottky Barrier Diode HRW0203A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 high effifiency rectifying. 0.55 Low forward voltage drop and suitable for +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 MPAK package is suittable for high density +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 surface mounting and high speed assembly. 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r R e p e titiv e p e a k re v e rs e v o lta g e A v e ra g e re c tifie d c u rre n t N o n -re p e titiv e p e a k fo rw a rd s u rg e c u rre n t J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re S ym bol V a lu e U n it V RRM 20 V IO 200 mA I F S M (N o te 1 ) 2 A Tj 125 T s tg -5 5 to + 1 2 5 N o te 1 . 5 0 H z s in e w a v e 1 P u ls e Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Typ Max Unit V Forward voltage VF IF = 200 mA 0.50 Reverse current IR V R = 30 V 50 Capacitance C V R = 0 V, f = 1MHz 40 A /W Marking Marking S5 www.kexin.com.cn 1