Diodes SMD Type Silicon Epitaxial Planar Diode HSM2692 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low forward resistance. (rf = 0.9 max) 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low capacitance. (C = 1.2pFmax) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 MPAK package is suitable for high density surface mounting and high speed assembly. 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it R e v e rs e V o lta g e VR 35 V P o w e r d is s ip a tio n Pd 150 mW J u n c tio n te m p e ra tu re Tj 125 S to ra g e te m p e ra tu re T s tg -4 5 to + 1 2 5 O p e ra tio n te m p e ra tu re T opr -2 0 to + 6 0 Electrical Characteristics Ta = 25 Param eter Sym bol Reverse voltage VR Reverse current IR Conditions M in I R = 10 35 A Typ M ax Unit V V R = 25 V 50 nA Forward voltage VF I F = 10 m A 1.0 V Capacitance C V R = 6 V, f = 1 M Hz 1.2 pF Forward resistance rf I F = 2 m A, f = 100 M Hz 0.9 Marking Marking B1 www.kexin.com.cn 1