IC IC SMD Type 80V N-Channel PowerTrench MOSFET KDS3512 Features 4.0 A, 80 V. RDS(ON) = 70m @ VGS = 10 V RDS(ON) = 80m @ VGS = 6 V Low gate charge (13 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to Source Voltage Parameter VDSS 80 V Gate to Source Voltage VGS Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power dissipation (Note 1a) Power dissipation (Note 1b) Power dissipation (Note 1c) Operating and Storage Temperature 20 V 4 A 30 A 2.5 PD 1.2 W 1 TJ, TSTG -55 to 175 Thermal Resistance Junction to Ambient (Note 1a) R JA 50 /W Thermal Resistance Junction to Case (Note 1) R JC 25 /W www.kexin.com.cn 1 IC IC SMD Type KDS3512 Electrical Characteristics Ta = 25 Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Symbol W DSS IAR BVDSS Breakdown Voltage Temperature Coefficient Testconditons Unit 90 mJ ( Not 2) 4.0 A VGS = 0 V, ID = 250 ID = 250 A Min Typ 80 V 80 A, Referenced to 25 mV/ Zero Gate Voltage Drain Current IDSS VDS = 64 V, VGS = 0 V 1 Gate-Body Leakage, Forward IGSSF VGS = 20 V, VDS = 0 V 100 nA Gate-Body Leakage, Reverse IGSSR VGS = -20 V, VDS = 0 V -100 nA Gate Threshold Voltage VGS(th) 4 V Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = 250 ID = 250 RDS(on) A 2 2.4 -6 A, Referenced to 25 VGS = 10 V, ID = 4.0 A 50 70 55 80 VGS = 10 V, ID =4.0 A,TJ = 125 91 135 ID(on) VGS = 10 V, VDS = 5 V gFS VDS = 10V, ID = 4.0 A Input Capacitance Ciss VDS = 40 V, VGS = 0 V,f = 1.0 MHz A mV/ VGS = 6 V, ID = 3.7 A Forward Transconductance On-State Drain Current 20 m A 14 S 634 pF Output Capacitance Coss 58 pF Reverse Transfer Capacitance Crss 28 pF Turn-On Delay Time td(on) 7 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time Total Gate Charge Qg Qgs Gate-Drain Charge Qgd Drain-Source Diode Forward Voltage www.kexin.com.cn VDD = 40 V, ID = 1 A,VGS = 10 V, RGEN = 6 (Note 2) tf Gate-Source Charge Maximum Continuous Drain-Source Diode Forward Current 2 Max VDD = 40 V, ID = 4.0A (Not 2) VDS = 40 V, ID = 4.0 A,VGS = 10 V (Note 2) VGS = 0 V, IS = 2.1 A (Not 2) ns 3 6 ns 24 38 ns 4 8 ns 13 18 nC 2.4 nC 2.8 nC IS VSD 14 0.8 2.1 A 1.2 V